| PART |
Description |
Maker |
| BCR562 |
PNP Silicon Digital Transistor 进步党硅数字晶体
Digital Transistors - PNP Silicon Digital Transistor
|
INFINEON[Infineon Technologies AG]
|
| BCR185U |
Digital Transistors - SC74 package
PNP Silicon Digital Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| BCR169S |
PNP Silicon Digital Transistor Array 进步党硅数字晶体管阵
Digital Transistors - SOT363 package
|
Infineon Technologies AG
|
| BCR42PN BCR42 |
Digital Transistors - SOT363 package
NPN/PNP Silicon Digital Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| BCR10PN BCR10 |
Digital Transistors - SOT363 package
NPN/PNP Silicon Digital Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| BCR08PN |
Digital Transistors - SOT363 package
NPN/PNP Silicon Digital Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| BCR169S BCR169SQ62702C2580 |
TRANSISTOR DIGITAL SOT363 晶体管数字SOT363封装
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| EMB53T2R |
PNP PNP Digital transistor (with built-in resistors)
|
ROHM
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| 2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五（巴西）总裁|8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 500mA的一（c）|
|
Central Semiconductor, Corp.
Microsemi, Corp.
|
| DTA114YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
